X-RAY CHARACTERIZATION OF BONDING INTERFACES

摘要

Interfacial X-ray reflection is used to study the evolution of bonding interfaces as a function of annealing. The sensitivity of the method allows the observation of very fine density or thickness changes in the different components of the interfacial profile. The example of Si/Si hydrophilic bonding is described in some details. Finally a direct method applicable to symmetric bonding (Si/Si or SiO2/SiO2) is used to obtain the electron density profile, removing possible uncertainties associated to the phase loss problem of X-ray scattering.