SILICON WAFER BONDING USING DEPOSITED AND THERMAL OXIDE: A COMPARATIVE STUDY

摘要

Wafer bonding of silicon wafers with various oxide layers to thermally oxidized Si handle wafers is described in this paper. We investigated plasma enhanced TEOS (PE-TEOS) and high density plasma (HDP) oxides, deposited with chemical vapor deposition (CVD). The bonding behavior of the CVD oxides was compared to the bonding of thermally grown oxides (TO). It was found that bubble-free bond interfaces are obtained when outgassing at a temperature of 600℃ of the CVD oxides was performed prior to bonding. The bond energies of the PE-TEOS/TO and HDP-CVD/TO pairs increased after annealing at 500℃ up to ～1 J/m~2. In comparison, the same annealing of the TO/TO bonded pairs yields a bond energy of ～ 1.5 J/m~2.