首页> 外文会议>Proceedings vol.2004-15; Symposium on Thin Film Transistor Technologies(TFTT VII); 20041004-06; Honolulu,HI(US) >SEMICONDUCTING PROPERTIES OF PENTACENE THIN FILMS STUDIED BY COMPLEX IMPEDANCE, SURFACE MOBILTY AND PHOTO-INDUCED EFFECTS
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SEMICONDUCTING PROPERTIES OF PENTACENE THIN FILMS STUDIED BY COMPLEX IMPEDANCE, SURFACE MOBILTY AND PHOTO-INDUCED EFFECTS

机译:并五苯薄膜的半导性,复阻抗,表面移动性和光诱导效应

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This paper discusses semiconducting properties of pentacene thin films focusing on complex impedance analysis, accurate carrier mobility determination, and carrier generation/annihilation processes, all of which are fundamental characteristics for any semiconductors. Although pentacene is considered to be a promising material for organic field effect transistors (FETs), there have not been many reports on basic properties as a semiconductor. For actual application and device modeling, quantitative analysis on the basis of experiments will be necessarily required. A carrier response in the semiconductor after majority carrier injection or generation in the film is a target to discuss, since it should affect a single device performance as well as circuit performance.
机译:本文讨论并五苯薄膜的半导体性能,重点在于复杂的阻抗分析,准确的载流子迁移率确定以及载流子生成/ an灭过程,所有这些都是任何半导体的基本特征。虽然并五苯被认为是有机场效应晶体管(FET)的一种有前途的材料,但是关于作为半导体的基本性能的报道还很少。对于实际应用和设备建模,必须根据实验进行定量分析。薄膜中多数载流子注入或生成后半导体中的载流子响应是讨论的目标,因为它会影响单个器件的性能以及电路性能。

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