A NEW PIXEL CIRCUIT TO RECOVER THRESHOLD VOLTAGE SHIFT IN AMORPHOUS SILICON TFT FOR ACTIVE MATRIX OLEDS

摘要

A new pixel circuit of a-Si:H thin film transistor (TFT) employing negative bias annealing for active matrix organic light emitting diode (AMOLED) is proposed. This circuit consists of two driving TFTs, two storage capacitors and two inverter blocks. The new driving scheme adopting negative bias annealing entitled polarity balanced driving (PBD) successfully suppresses the degradation of V_(TH) in a-Si:H TFT. The proposed pixel circuit was also verified by spice simulation with device parameters extracted from experimental data.