SINGLE HIGH ASPECT RATIO PILLAR SUPPORT STRUCTURES

摘要

This paper describes the realization of a new three dimensional dry processing technique used to create structures supported by a single high aspect ratio support. This process allows for the creation of submicron single crystal silicon features, with tight geometric control, attached to much larger (10-200μm) silicon dioxide platforms. These single high aspect-ratio pillar support structures, or SHARPS, lend themselves to testing of submicron features and open new avenues of device design. One application for SHARPS as a passive adhesive is also investigated. The unique geometry created by SHARPS structures allows the structures to conform to non-planar or rough surfaces.