ELECTRICAL PROPERTIES OF InN GROWN BY MOLECULAR BEAM EPITAXY

摘要

The basic properties of indium nitride (InN) are becoming understood due to advancement in growth techniques using molecular beam epitaxy. GaN and AlN buffers permit thick InN layer growth with reproducible structural, electrical and optical properties. Improved electrical properties include reduction in electron density in undoped InN and increased mobility as a function of InN layer thickness. Surface and interface electron accumulation add significant conductivity that is extracted for determination of the electron density profile. Electrochemical CV profiles confirm surface electron accumulation. Surface chemical exposures further raise electron accumulation. Early applications of low bulk, high surface, electron density InN include near-surface THz emission and electrochemical sensing. These effects result from surface electron accumulation of 2-3 x 10~(13) cm~(-2) sheet density.