Characterization of InGaAs self-mixing detectors for chirp, amplitude-modulated LADAR (CAML)

摘要

InGaAs-based Metal Semiconductor Metal (MSM) Photodetectors were fabricated and tested as been used for photodetectors and Opto-electronic mixers. A comparison of various processing schemes for MSM InAlAs/InGaAs photodetectors on InP substrates was conducted to minimize the dark current. An InAlAs based Schottky Enhanced Layers (SEL) was employed on InGaAs MSM to enhance the barrier height to reduce the dark current. The effect of SEL thickness on the performance of OE mixer was studied. The experimental results were compared to those simulated with CFDRC software.