Reduced impact ionization by using IN_(0.53)(al_xGa_(1-x)_(0.47)As (x chemical bounds 0.1 0.2) channel in InP HEMTs

摘要

In_(0.52)al_(0.48)Ga_(0.47)As high electron mobility transistors (HEMTs) lattice-matched to InP substrates have achieved a great successful role on microwave devices and circuits. However, a significant kink effect is observed in I-V characteristics. This kink effect together with a high output conductance is associated with a higher impact ionization rate in the InGaAs channel, which deteriorates the device performance. Due to this disadvantage of low energy bandgep InGaAs channel, in this study, we added a small amount of Al into the InGaAs channel to enhance the bandgap, and expect a reduction of impact ionization process. In the mean while, the life-time testing associated device performance could also be improved.