III-V interband and intraband far-infrared detectors

摘要

A review of the characteristics of the state-of-the-art detectors based on III-V materials are presented in this paper. Classification of detectors by wavelength region in which they are used and by the materials from which they are fabricated is given. Necessity for use of the infrared detectors in very long wavelength region is brielf discussed. The argument in favior of quantum well infrared detectors is given, and amongst a variety of different types special attention is paid to InGaAsP based QWIP's. Both p-type doped and n-type doped devices are analyzed and properties of each are modeled. Those calculation provide the answer to how these materials need to be tailored in order to realize the best detector performance for specific purpose.