首页> 外文会议>Proceedings of the Twenty-Third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 >Influence of refractive index contrast on photonic band gap in 3D periodic SiO_2 matrices filled with a semiconductor
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Influence of refractive index contrast on photonic band gap in 3D periodic SiO_2 matrices filled with a semiconductor

机译:折射率对比度对填充半导体的3D周期性SiO_2矩阵中的光子带隙的影响

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摘要

By spectral transmission measurements the optical stop-bands in 3D periodic SiO_2 matrices (synthetic opals) are studied as a function of the refractive index contrast. In order to vary the refractive index contrast the pores of opals were filled with various liquids and with semiconductor microcrystals. In the latter case a dramnatic decrease of Bragg-defined light attentuation length within the stop-band was observed indicating strong perturbation of photonic states. The parameters of photonic lattice of the synthetic opals required to achieve a prominent depletion of the photonic density of states (pseudogap) are estimated.
机译:通过光谱透射测量,研究了3D周期性SiO_2矩阵(合成蛋白石)中的光学阻带,作为折射率对比度的函数。为了改变折射率对比,蛋白石的孔充满了各种液体和半导体微晶。在后一种情况下,观察到阻带内布拉格定义的光衰减长度急剧减小,表明光子态的强烈扰动。估计了实现状态的光子密度(pseudogap)显着耗尽所需的合成蛋白石的光子晶格参数。

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