An investigation is performed of different models of dislocation-related photoluminescence (PL) in cubic semiconductors with damond and zine-blende lattices. it is concluded that the model of the dislocation exciton (DEX) and the DEX complexes with carriers in one-dimensional dislocation bands split-off from the volume bands buy the dislocation strain field provdes the best description of the observed properties of dislocation-related PL in Ge, Si, ZnSe, CdTe and ZnTe crstals. An extension of this concenpt on the case of wurtzite GaN allows to attribute the 364 nm PL-system to DEX and DEX complexes at c-axis screw dislocations. It was found that for a propoer calculation of the carrier binding energies at screw dislocations the topological interaction and the Berry geometrical phase should be taken into account. A calculation of the binding energies of DEX, hole and DEX+hole complex at the screw dislocation 35 meV, 65 meV and 7 meV in accord with experimental data.
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