Preparation and photoluminescence performance of ZnO nanowires

摘要

ZnO nanowires were prepared on silicon (100) substrates through an Au-catalyst vapor-liquid-solid growth process at growth temperature of 800℃ and characterized by scanning electron microscopy (SEM). Photoluminescence (PL) spectra of ZnO nanowires were measured with the pumping source of xenon lamp in ultraviolet range. Strong ultraviolet near-band-edge free exciton emission (377nm), a new exciton emission (388nm) associated with an exciton-exciton collision process, and a weak visible band emission (～472nm) due to the zinc vacancy (V_(Zn)) are observed in the PL spectra.