首页> 外文会议>Proceedings of the Science and Technology of Atomically Engineered Materials Richmond, Virginia, USA Oct 30-Nov 4 1995 >Study of the fractal characters of surface morphology for hydrogenated silicon films
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Study of the fractal characters of surface morphology for hydrogenated silicon films

机译:氢化硅膜表面形貌的分形特征研究

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摘要

The morphology of surface microstructure of hydrogenated silicon films is observed by STM 5-october 1995technology and the factual dimensions of the surface morphologies of films are calculated by associated with the fractal theory. The results show that there exists a maximum fractal dimension D when silicon films are consisted of nano-crystalline structure.
机译:用STM 1995年10月5日的技术观察了氢化硅膜的表面微观结构形态,并通过分形理论计算了膜的表面形态的实际尺寸。结果表明,当硅膜为纳米晶体结构时,存在最大的分形维数D。

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