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Behavioral Modeling of LDO

机译:LDO的行为建模

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摘要

A 1.2 V 40 mA low-dropout regulator (LDO) for system-on-chip applications with 700 mV dropout is designed in Verilog-A. The proposed LDO provides fast line and load-transient responses with temperature-independent operation. The proposed LDO has been designed in Verilog-A using tsmc 65 nm CMOS technology and the total error of the output voltage due to line and load variations is low. The proposed LDO Design can be used to check the functional correctness of the SOC in the AMS verification flow.
机译:在Verilog-A中设计了一个1.2 V 40 mA低压差稳压器(LDO),用于具有700 mV压差的片上系统应用。所提出的LDO具有与温度无关的操作,可提供快速的线路和负载瞬态响应。拟议的LDO已使用tsmc 65 nm CMOS技术在Verilog-A中进行了设计,由于线路和负载的变化,输出电压的总误差很小。提出的LDO设计可用于检查AMS验证流程中SOC的功能正确性。

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