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THIN FILM FUSE LINK

机译:薄膜保险丝链接

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摘要

The operating characteristics of a compact style of substrate fuse link will be presented. The fuse consisted of an alumina substrate with a combination of single layer screen printing and vapour deposited silver film that formed the element. The fuse link had a nominal current rating capacity of 63 Amps and was tested both at low and high overloads. In addition capacitor bank tests were also performed which tested the fuse link's ability to clear a DC short circuit. The new fuse links had a shorter operating time when compared with the conventional semiconductor fuse of similar rating. From the "captured" current-voltage characteristics, there is a sharp cutoff to the short circuit current with no overshoot which gives a more symmetrical current waveform. The largest performance gain is in the lowering of the I~2t let through when compared with a conventional fuse link. In general there was a factor of seven improvement when using a substrate fuse. However, for high overload currents, this improvement increased to a factor of 19. These results show that this type of fuse link demonstrates some clear advantages for the protection of sensitive semiconductor devices.
机译:将介绍紧凑型基板熔断体的工作特性。保险丝由氧化铝基材和单层丝网印刷与气相沉积银膜的组合构成,形成了元件。保险丝的额定额定电流为63安培,并已在低过载和高过载条件下进行了测试。此外,还进行了电容器组测试,测试了熔断器消除直流短路的能力。与具有类似额定值的常规半导体保险丝相比,新的保险丝链具有较短的工作时间。从“捕获的”电流-电压特性中,短路电流有一个急剧的截止,没有过冲,从而给出了一个更加对称的电流波形。与常规熔断器相比,最大的性能提升在于降低了I〜2t的通过量。通常,使用基板熔断器可提高七倍。但是,对于高过载电流,这种改进增加到了19倍。这些结果表明,这种类型的熔断体在保护敏感的半导体器件方面显示出一些明显的优势。

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