Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications

摘要

A promising high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted SOI technology (UTBB-FDSOI) is experimentally demonstrated. The Dual Ground Plane Extended-Drain MOSFET (DGP EDMOS) architecture uses the back-gate biasing as an efficient lever to optimize high-voltage performances. We show that the separated biasing of the two ground planes enables independent control of the channel and drift regions. Electrical characteristics such as specific on-resistance/breakdown trade-off as a function of the back-gate voltage and geometry are explored. We present and discuss encouraging results for 5V switched mode applications for energy management.