A generic CAD model for arbitrarily shaped and multi-layer integrated inductors on silicon silicon substrates

摘要

A generic and process-independent lumped element model for simulating the performance of arbitrarily shaped and multi-layer inductors on silicon substrates is presented. Integrated inductors are modeled using an equivalent two-port network for each segment of the spiral. An algorithm that extracts the complete circuit is presented in denetic and capacitive coupling, substrate losses, conductor skin effect and image current on the ground plane. Octagonal, square and two-layer integrated spiral inductors were designed and fabricated using three different processes. Measurement results confirm the accuracy of the model.