Application of gallium doped zinc oxide in dye sensitized solar cells

摘要

In this study, we investigated the effect of doping zinc oxide (ZnO) microrods on fluorine-doped tin oxide (FTO) conductive glass without seed layer and its characteristics at the photo electrode of dye-sensitized solar cell (DSSC). Octadecyltrimethoxysilane (ODS; CH(CH)Si(OCH)) deposited on the substrate form a self-assembled monolayer by to enhance the following growth of ZnO microrods. 0.03M of zinc nitrate hexahydrate (Zn(NO)·6HO) and 0.03 M hexamethylene tetramine (CHN, HMT) were the main reaction materials in the hydrothermal method. In this experiment, the ZnO mircorods was doped with gallium, using the gallium nitrate (Ga(NO)) of 0.15 to 0.60 mM. The ZnO microrods applied for DSSCs analyzed by FE-SEM, UV-Vis spectra and I-V curves.