首页> 外文会议>Proceedings of the 2017 IEEE International Conference on Applied System Innovation >Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures
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Growth of CuInSe2 nanowire arrays by pulse electrodeposition with an electrolyte at varying temperatures

机译:通过在不同温度下用电解质进行脉冲电沉积来生长CuInSe2纳米线阵列

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We prepared CuInSe nanowire (NW) arrays in an electrolyte at temperatures ranging from 272 K to 318 K by using pulse electrodeposition techniques and an anodized aluminum oxide template. We photographed the detailed microstructures of CuInSe nanowire arrays with high-resolution transmission electron microscopy (HRTEM); the images showed the polycrystalline nature of the CuInSe nanowires made in electrolyte at a temperature of 318 K. The results of X-ray diffraction and scanning electron microscopy showed that the electrodeposition temperature constrained the CuInSe NW nucleation mechanism.
机译:我们通过使用脉冲电沉积技术和阳极氧化铝模板在272 K至318 K的温度范围内的电解质中制备了CuInSe纳米线(NW)阵列。我们用高分辨率透射电子显微镜(HRTEM)拍摄了CuInSe纳米线阵列的详细微观结构;图像显示了在318 K的温度下在电解质中制备的CuInSe纳米线的多晶性质。X射线衍射和扫描电子显微镜的结果表明,电沉积温度限制了CuInSe NW成核机理。

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