Parameters Extraction of Photovoltaic Cell Based on Experimental Current-Voltage Characteristic

摘要

In this paper, we present a method to extract the parameters of the single diode model, for a polycrystalline silicon photovoltaic cell and for other photovoltaic modules technologies. This method is based essentially on the use of the experimental current-voltage characteristic Ⅰ-Ⅴ. The calculation of the expressions for the three parameters, the photo-current I_(ph), the saturation current Is, and the shunt resistance R_(sh), are found through the various equations found at the three limits points of the Ⅰ-Ⅴ characteristic (I_(sc), V_(oc), I_m, V_m). The two parameters, the series resistance R_s and the ideality factor n, are found by using the maximum point derivative equation, and the numerical plot of the logarithmic derivative of the voltage with respect to the current. The numerical values obtained by testing a polycrystalline silicon cell which the Ⅰ-Ⅴ data were measured in the laboratory, gives good results compared to other methods. The test made on several photovoltaic module technologies show also the effectiveness of the method in term of calculation.