首页> 外文会议>Proceedings of the 12th Asian conference on solid state ionics : Fundamental researches and technological applications >INFLUENCE OF A-SITE COMPOSITE DOPING ON CHEMICAL DIFFUSION COEFFICIENT OF PEROVSKITE OXIDES (La1-xPrx)2/3 Sr1/3Co0.8Ni0.2O3
【24h】

INFLUENCE OF A-SITE COMPOSITE DOPING ON CHEMICAL DIFFUSION COEFFICIENT OF PEROVSKITE OXIDES (La1-xPrx)2/3 Sr1/3Co0.8Ni0.2O3

机译:铝基复合材料掺杂对钙钛矿氧化物(La1-xPrx)2/3 Sr1 / 3Co0.8Ni0.2O3的化学扩散系数的影响

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Perovskite oxides (La1-xPrx)2/3Sr1/3Co0.8Ni0.2O3 (LPSCN,x=0.2,0.4,0.6,0.8) were synthesized by solid state-reaction method. Electrical conductivity relaxation method was used to determine the oxygen chemical diffusion coefficients chem D. The results indicate that the LPSCN samples have high oxygen chemical diffusion coefficients, which increase gradually with the decreasing of content Pr and the rising of temperature. The relation of conductivity and oxygen partial pressure is n P2 刦 冦. The conductivity increases with the reducing of content Pr and the decreasing of temperature. The oxygen chemical diffusion coefficient chem D of LPSCN-82 is 1.18⊙10-4cm2s-1at 800. The max conductivity of the specimen of LPSCN-82 is 974.74 S.cm-1 at 500 under 1.00bar oxygen partial pressure. The specimen of LPSCN-82 show good cathode materials, and were used for our intermediate temperature solid oxide fuel cells development.
机译:通过固相反应法合成了钙钛矿氧化物(La1-xPrx)2 / 3Sr1 / 3Co0.8Ni0.2O3(LPSCN,x = 0.2,0.4,0.6,0.8)。结果表明,LPSCN样品的氧化学扩散系数较高,随Pr含量的降低和温度的升高而逐渐增加。电导率与氧分压的关系为n P2劫冦。电导率随含量Pr的减少和温度的降低而增加。 LPSCN-82的氧化学扩散系数chem D在800下为1.18⊙10-4cm2s-1。 LPSCN-82的最大电导率在1.00bar氧气分压下于500°下为974.74 S.cm-1。 LPSCN-82的样品显示出良好的正极材料,并用于我们的中温固体氧化物燃料电池的开发。

著录项

  • 来源
  • 会议地点 Wuhan(CN)
  • 作者单位

    Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021, P. R. China School of Physical Science and Technology;

    Inner Mongolia University,Hohhot 010021, P. R. China;

    Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021, P. R. China School of Physical Science and Technology;

    Inner Mongolia University,Hohhot 010021, P. R. China;

    Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021, P. R. China School of Physical Science and Technology;

    Inner Mongolia University,Hohhot 010021, P. R. China;

    Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Reg;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号