Infineon Technol. AG, Neubiberg, Germany;
MOSFET; carrier density; doping profiles; field effect transistors; semiconductor device breakdown; semiconductor doping; Y-shaped field plates; YFET; acceptor concentration; breakdown voltage; cell pitch; charge compensated device; donator concentration; doping concentrations; numerical simulation; oxide filled trenches; pitch devices; superjunction devices; voltage 680 V;
机译:用于超低导通电阻和高击穿电压的扩展沟槽栅极超结横向功率MOSFET
机译:用于超低导通电阻和高击穿电压的扩展沟槽栅极超结横向功率MOSFET
机译:半超结沟道功率MOSFET的氮化硅层RSO工艺仿真与制备研究
机译:YFET - 沟槽超结过程窗口扩展
机译:适应性的移动窗口:随着时间的推移扩展人与环境的适应性研究。
机译:孵化器中舱口窗口和养分接入对等舱口窗口表示饲养的肉鸡性能和加工产量的影响
机译:用氮化硅层的RSO工艺模拟和制造研究
机译:ada编译器验证摘要报告:证书编号:940110W1.11337 VerdixCorporation VaDs Windows NT / 486,Vada 110-36315,版本6.2 Compudyne 486(带浮点协处理器)在Windows NT,3.1下