Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection

机译：发射显微镜检查基于氮化物的光电泄漏电流

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GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation were fabricated and characterized. Inductance couple plasma (ICP) etching would cause significant

机译：制备并表征了具有E-gun SiO2钝化和等离子增强化学气相沉积（PECVD）SiO2钝化的GaN MSM光电探测器（PDs）和p-i-n光电探测器（PDs）。电感耦合等离子体（ICP）蚀刻会导致

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《Power Quality and Supply Reliability Conference, 2008》|2007年|P.1-4|共4页
会议地点 Bangkok,Thailand
作者
Yu-Zung Chiou; Tsun-Kai Ko; Chun-Kai Wang; Tien-Kun Lin; Kuan-Wei Lin;
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III-V semiconductors; gallium compounds; inspection; leakage currents; nitrogen; optoelectronic devices; photodetectors; plasma CVD; silicon compounds; sputter etching; E-gun SiO2 passivation; GaN; MSM photodetectors; SiO; emission microscopy inspection; inductance cou;

机译：III-V半导体；镓化合物检查;漏电流氮;光电器件；光电探测器等离子体CVD;硅化合物;溅射蚀刻电子枪SiO2钝化；氮化镓; MSM光电探测器； SiO;发射显微镜检查；电感耦合;

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专利

1. Leakage Current Analysis of Nitride-Based Photodetectors by Emission Microscopy Inspection [J] . Chiou Y. Z. IEEE sensors journal . 2008,第9期

机译：发射显微镜检查基于氮化物的光电探测器的漏电流分析
2. Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model [J] . Kotani J, Hashizume T, Hasegawa H Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第4期

机译：基于薄表面势垒模型的氮化物肖特基二极管过大泄漏电流的分析和控制
3. Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy [J] . Shirshendu Dey, Suhas M. Jejurikar, K. P. Adhi, Applied Physicsletters . 2008,第9期

机译：使用导电原子力显微镜直接观察/表征氧化锌/氮化铝薄膜前体场效应晶体管结构中电流泄漏点的空间分布
4. Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection [C] . Yu-Zung Chiou, Tsun-Kai Ko, Chun-Kai Wang, Asia Pacific Microwave Conference . 2007

机译：发射显微镜检测渗漏电流分析氮化物基光电子
5. Gate Leakage Current in Nitride-Based HFETs. [D] . Goswami, Arunesh. 2014

机译：基于氮化物的HFET中的栅极漏电流。
6. Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array [O] . Zhisheng Chen, Renjun Song, Qiang Huo, 2021

机译：基于HFO2 / TAOX的3-D垂直电阻随机存取存储器阵列漏电流分析
7. Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model [O] . Kotani, Junji, Hashizume, Tamotsu, Hasegawa, Hideki 2004

机译：基于薄表面势垒模型的氮化物肖特基二极管过大泄漏电流的分析和控制
8. Bright-Field Analysis of Field-Emission Cones Using High-Resolution TransmissionElectron Microscopy and the Effect of Structural Properties On Current Stability [R] . Goodhue, W. D., Nitishin, P. M., Harris, C. T., 1994

机译：高分辨率透射电子显微镜对场发射锥的明场分析及结构特性对电流稳定性的影响

Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection

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