Department of Material Science and Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-831, Japan;
Department of Material Science and Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-831, Japan;
Research Institute for Applied Mechanics, Kyushu University, Kasuga-koen 6-1, Kasuga-shi, Fukuoka 816-8580, Japan;
Reactor Research Institute, Kyoto University, Kumatori-cho, Sennan-Gun, Osaka 590-0494, Japan;
Reactor Research Institute, Kyoto University, Kumatori-cho, Sennan-Gun, Osaka 590-0494, Japan;
Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency Takasaki, Gunma 370-1292, Japan;
Department of Material Science and Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-831, Japan;
Fe-AI; electron irradiation; defects; ordered alloy;
机译:B2型Fe-Al合金中2和9MeV电子照射引入的缺陷研究
机译:n型和P型单晶硅硅中1 eV电子照射诱导缺陷的研究
机译:MeV电子辐照引入Si-SiO_2结构的电子发射缺陷的特征
机译:B2型Fe-Al合金中2和9MeV电子照射引入的缺陷研究
机译:高压电子显微镜辐照的金属和合金中的晶格缺陷
机译:4MeV和6MeV电子束对全皮肤照射的剂量学比较
机译:通过1.25 mev电子辐照在80°K /铜中引入晶格缺陷的电阻率研究
机译:10-mev电子辐照在硅中引入缺陷的性质