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Effects of insulating layers on the performance of organic electroluminescent devices

机译:绝缘层对有机电致发光器件性能的影响

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Abstract: In this paper, we demonstrate the enhancement in the performance of organic electroluminescent devices upon the insertion of an insulting layer or layers of LiF in the device structure. Highly efficient and bright organic light-emitting devices were fabricated with this approach. External quantum efficiencies approaching 3% and light output exceeding 45,000 cd/m$+2$/ have been achieved for green light-emitting devices with Al cathode. This technique can be extended to fabricate efficient blue and sharp-red light-emitting devices. In this respect, using Al as the electron injecting electrode, blue light-emitting devices with external quantum efficiency of 1.4% and light output more than 4,000 cd/m$+2$/ have been achieved without the use of dopants. For sharp-red light- emitting devices, record efficiency and light output were obtained when LiF was used. Devices without the LiF layer showed light output levels lower than 5 cd/m$+2$/, whereas, with the insertion of LiF before the cathode, the external quantum efficiency exceeded 1% and light output was higher than 320 cd/m$+2$/. All of these devices had lower operational voltage than similar devices without the LiF layer. Preliminary UPS-XPS results revealed a sharp decrease in the work function of aluminum upon the deposition of sub-monolayer of LiF. Although, the use of the LiF layer on the indium-tin- oxide anode showed some enhancement in device performance, the contribution to device performance is lower than the case with the same insulator deposited at the cathode side, indicating that the cathode is more problematic than the hole injecting indium-tin-oxide electrode. !10
机译:摘要:在本文中,我们证明了在器件结构中插入一层或多层LiF绝缘层后,有机电致发光器件的性能得到了增强。用这种方法制造了高效且明亮的有机发光器件。对于具有铝阴极的绿色发光器件,已经实现了接近3%的外部量子效率和超过45,000 cd / m $ + 2 $ /的光输出。该技术可以扩展到制造有效的蓝色和红色的发光器件。在这方面,通过使用Al作为电子注入电极,已经实现了在不使用掺杂剂的情况下具有1.4%的外部量子效率和超过4,000cd / m $ + 2 $ /的光输出的蓝色发光器件。对于锐红色发光器件,当使用LiF时可获得记录效率和光输出。没有LiF层的设备显示出的光输出水平低于5 cd / m $ + 2 $ /,而在阴极之前插入LiF时,外部量子效率超过1%,光输出高于320 cd / m $。 + 2 $ /。与没有LiF层的类似设备相比,所有这些设备都具有较低的工作电压。初步的UPS-XPS结果表明,沉积LiF的亚单分子层后,铝的功函数急剧下降。尽管在氧化铟锡阳极上使用LiF层显示出器件性能的某些增强,但与在阴极侧沉积相同绝缘体的情况相比,对器件性能的贡献要低,这表明阴极更成问题比空穴注入铟锡氧化物电极。 !10

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