首页> 外文会议>Novel In-Plane Semiconductor Lasers XVIII >Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band
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Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band

机译:基于波长控制的自组装InAs量子点的可调谐外腔激光二极管,用于1100 nm波段的扫频光学相干层析成像应用

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摘要

We fabricated and characterized a grating-coupled external cavity laser with gain chips including self-assembled InAsquantum dots (QDs) for swept-source optical coherence tomography applications. By controlling the emissionwavelength of the self-assembled InAs QDs, tunable lasing at a wavelength band of 1–1.1 μm was obtained, whichrepresents an optimal balance between absorption and scattering in biological tissues. Straight and J-shaped edgeemittingridge waveguides (RWGs) were fabricated on a GaAs-based waveguide layer containing four InAs QDs layers.A diffraction grating with the quasi-Littrow configuration was employed as an external cavity for the fiber-coupleddiodes. Electroluminescence spectra from the QD-based diodes revealed that broadband amplified spontaneousemissions appeared in a J-shaped RWG, whereas Fabry–Perot lasing occurred in the straight RWG. The external cavitywas then introduced for the diode with a J-shaped RWG, and a tuning range of 65 nm centered at approximately 1100nm was obtained from the QD gain chip with the J-shaped RWG.
机译:我们制造并表征了带有增益芯片的光栅耦合外腔激光器,其中包括用于扫频光源光学相干层析成像应用的自组装InAs \ r \ n量子点(QD)。通过控制自组装InAs量子点的发射波长,可以在1-1.1μm的波长带上获得可调激光,这代表了生物组织吸收与散射之间的最佳平衡。在包含四个InAs QDs层的基于GaAs的波导层上制造了直线形和J型边缘发射\ r \ n脊形波导(RWG)。\ r \ n采用准Littrow构造的衍射光栅作为光纤的外腔-耦合\ r \ ndiodes。基于QD的二极管的电致发光光谱表明,宽带放大的自发\ r \发射出现在J形RWG中,而Fabry-Perot激射发生在直线RWG中。然后为具有J形RWG的二极管引入外腔,从具有J形RWG的QD增益芯片获得65 nm的调谐范围,中心约为1100 \ r \ nnm。

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  • 来源
    《Novel In-Plane Semiconductor Lasers XVIII》|2019年|1093911.1-1093911.6|共6页
  • 会议地点 0277-786X;1996-756X
  • 作者单位

    School of Engineering, University of Glasgow, Glasgow, G12 8LT, U.K. Faculty of Systems Eng., Wakayama Univ., 930 Sakaedani, Wakayama 640-8510, Japan;

    School of Engineering, University of Glasgow, Glasgow, G12 8LT, U.K.;

    School of Engineering, University of Glasgow, Glasgow, G12 8LT, U.K.;

    Faculty of Systems Eng., Wakayama Univ., 930 Sakaedani, Wakayama 640-8510, Japan;

    Faculty of Systems Eng., Wakayama Univ., 930 Sakaedani, Wakayama 640-8510, Japan;

    National institute for materials science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;

    National institute for materials science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;

    National institute for materials science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;

    National institute for materials science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;

    School of Engineering, University of Glasgow, Glasgow, G12 8LT, U.K.;

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