Carrier transport in dichromatic color-coded semipolar (2021) and (2021) Ⅲ-nitride LEDs

摘要

Simulation of Ill-nitride color-coded multiple quantum well (MQW) LED structures was performed using as an experimental benchmark dichromatic semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Y. Kawaguchi et.al, APL 100, 231110, 2012). Different QW depths in the color-coded LEDs and opposite interface polarization charges in Ga-polar and N-polar structures provide different conditions for carrier transport across the LED active regions. Combination of several effects was crucial for adequate reproduction of the emission spectra experimentally observed in color-coded structures with violet-aquamarine and aquamarine-violet active region layouts. A standard drift-diffusion transport model wascompleted with rate equations for nonequilibrium QW populations and several high-energy transport features, including the effects of QW carrier overshoot and Auger-assisted QW depopulation. COMSOL-based Optoelectronic Device Modeling Software (ODMS) developed at Ostendo Technologies Inc. was utilized for device simulation.