Center for High Technology Materials, University of New Mexico, 1313 Goddard SE,Albuquerque, NM 87106, USA,Air Force Research Laboratory, 3550 Aberdeen Ave SE, Kirtland AFB, NM 87120;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE,Albuquerque, NM 87106, USA;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE,Albuquerque, NM 87106, USA;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE,Albuquerque, NM 87106, USA;
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE,Albuquerque, NM 87106, USA;
Semiconductor lasers; passively mode-locked lasers; quantum dots; temperature performance;
机译:使用In(Ga)As量子点或GaAs基质上生长的量子阱材料的单模被动锁模激光器的比较
机译:使用In(Ga)As量子点或GaAs基体上生长的量子阱材料对单模无源锁模激光器进行比较
机译:通过Pd-GaAs晶片键合在硅衬底上无源锁模InAs量子点激光器
机译:被动模式锁定量子点激光器的特性从20到120°C
机译:单片量子点无源锁模激光器的时域表征。
机译:具有极低重复频率的单片被动锁模量子点激光器的研究
机译:使用量子点或量子阱材料在Gaas衬底上生长的单片被动锁模激光器
机译:被动锁模量子点激光器的脉冲特性(后印刷)