Advances in Laser Cooling of Semiconductors

摘要

Laser cooling in semiconductor structures due to anti-Stokes luminescence is reviewed. Theoretical background considering luminescence trapping and red-shifting, the effect of free carrier and back-ground absorption, Pauli band-blocking, and the temperature-dependence of various recombination mechanisms are discussed. Recent experimental results demonstrating record external quantum efficiencies (EQE) in GaAs/GaInP heterostructures are described, and conditions favorable for the first observation of laser cooling in semiconductors are discussed.