Electron gas refrigeration and thermometry by semiconductor-superconductor junctions

摘要

We have demonstrated thermometry and refrigeration of electrons in heavily doped silicon by quasiparticle tunneling at low temperatures using a superconductor-semiconductor-superconductor double Schottky junction structure. Aluminum is used as the superconductor and a thin heavily doped silicon-on-insulator film as the semiconductor. Characteristics of samples with different doping levels are reported.