Enhanced light-extraction in GaN light-emitting diode with binary blazed grating reflector

摘要

Enhancement of light extraction in a GaN light-emitting diode (LED) employing a binary blazed grating reflector (BBGR) is presented. The BBGR consists of asymmetrically periodic structure etched on the GaN layer. Rigorous coupled-wave analysis (RCWA) is adopted to calculate the reflectivity of the BBGR, which shows that it has the characteristics of broadband reflection spectrum and very high reflectivity. The result of high angle-averaged reflectivity up to 94% from 300nm to 450nm predicts the potential enhancement of light-extraction efficiency of GaN LEDs with BBGR.