Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic;
Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic;
Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic;
Department of Physics, Faculty of Electrical Engineering and Communication, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic;
CIGS; chalcopyrite; thin-film; solar cell; microstructural defects; electroluminescence mapping; scanning electron microscope; lock-in infrared thermography;
机译:黄铜矿半导体中的缺陷:Cu(In,Ga)Se2黄铜矿中的缺陷:材料性能,缺陷状态和光伏性能的比较研究(Adv。Energy Mater。5/2011)
机译:宏观和微观研究Cu(In,Ga)Se2柔性太阳能电池的缺陷及其对太阳能电池性能的影响
机译:Cu(In,Ga)Se2黄铜矿半导体中的缺陷:材料性能,缺陷状态和光伏性能的比较研究
机译:通过光谱过滤电致发光检测黄铜矿Cu(In,Ga)Se_2 Se_2太阳能电池的微观结构缺陷
机译:TiO2作为Cu(In,Ga)SE2太阳能电池中的中间缓冲层
机译:由于缓冲/窗口界面缺陷而在Cu(InGa)Se2太阳能电池中产生红色扭折电流-电压曲线的数据集
机译:RB在多晶Cu(In,Ga)Se2层中的扩散和Rb对Cu(In,Ga)SE2薄膜太阳能电池太阳能电池参数的影响