Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8,616 00 Brno, Czech Republic;
Dagestan State University, Faculty of Physics, Russia, Gadjieva 43a, 367000, Makhachkala, Russia;
Dagestan State University, Faculty of Physics, Russia, Gadjieva 43a, 367000, Makhachkala, Russia;
Dagestan State University, Faculty of Physics, Russia, Gadjieva 43a, 367000, Makhachkala, Russia;
Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8,616 00 Brno, Czech Republic;
X-ray diffraction; composition; photoluminescence; absorption coefficient; optical band gap; electron transition;
机译:2D半导体中从间接带隙到直接带隙的热驱动交叉:MoSe_2与MoS_2
机译:间接带隙半导体中的多光子激发和热活化
机译:原子薄层ReS_2的光致发光量子产率:间接带隙半导体的鉴定
机译:用间接和直接带隙表征SiC-ALN半导体固体溶液
机译:电子和声子激发对间接间隙半导体的光学性能的影响。
机译:通过宽带隙半导体中的直接毫微微第二激光书写使能彩色中心
机译:在半导体中间接向带隙的热驱动交叉:mose2与mos2