Wafer fused InP-GaAs optically-pumped semiconductor disk laser operating at 1.57-μm

摘要

A wafer fusing was applied to integrate an InP-based active medium and a GaAs/AlGaAs distributed Bragg reflector in an optically pumped semiconductor disk laser. Over 50 mW of output power at room temperature in 1570-1585 nm spectral range was demonstrated. The results of this study reveal an important finding: the wafer fusion can be used in emitters with high power. This approach would allow for monolithic integration of lattice-mismatched compounds, quantum-well and quantum-dot based media and promises substantial wavelength tailoring of semiconductor disk lasers.