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Improvement of a DUV mask inspection tool to hand over the baton for next-generation tool smoothly

机译:改进了DUV面罩检查工具,可顺利将接力棒移交给下一代工具

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Various technologies such as multiple patterning (MP) are being developed to extend the current DUV optical lithography to deal with the delay of next generation lithography such as EUV and NIL. Likewise, it is necessary to continue to develop technologies for mask inspection tools for masks fabricated for the DUV optical lithography so that they can be appropriately inspected, until the next generation EB or EUV actinic inspection tools is put into practical use. To fabricate 1x nm devices with the present lithography process, the industry will likely further extend double patterning (DP) to multiple patterning (MP). For MP, the requirements for the inspection sensitivity of traditional defects such as intrusions or extrusions do not change much, but those for CD control and overlay tolerances will become more critical. In this paper, we will discuss the main features of NPI-7000, a DUV based mask inspection tool for the lx nm node devices, and our challenges in enhancing the CD error sensitivities to enable the inspection of masks.
机译:正在开发各种技术,例如多重图案(MP),以扩展当前的DUV光学光刻技术,以应对下一代光刻技术(例如EUV和NIL)的延迟。同样,有必要继续开发用于DUV光刻的掩模的掩模检查工具技术,以便可以对它们进行适当的检查,直到下一代EB或EUV光化检查工具投入实际使用为止。为了用当前的光刻工艺制造1x nm器件,业界可能会进一步将双图案(DP)扩展到多图案(MP)。对于MP,对传统缺陷(如侵入或挤出)的检查灵敏度的要求变化不大,但对CD控制和覆盖公差的要求将变得更为关键。在本文中,我们将讨论NPI-7000(用于1x nm节点设备的基于DUV的掩模检测工具)的主要功能,以及在增强CD错误敏感性以实现掩模检测方面所面临的挑战。

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