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Understanding photoacid generator distribution at the nanoscale using massive cluster secondary ion mass spectrometry

机译:使用大规模簇二次离子质谱法了解纳米级的光酸产生剂分布

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As the semiconductor industry continuously pursues smaller and more advanced device nodes, improving thelithographic performance of photoresists becomes more critical and challenging. The homogeneity of the photoresistformulation components within the thin film, such as the distribution of photoacid generator (PAG) molecules, arecritical factors influencing resolving capability and the sidewall roughness after development. However, there is stilllack of fundamental experimental approaches to probe the distribution of these components at the nanoscale throughoutthe photoresist film. Herein, we present the use of a new methodology, namely, massive cluster secondary ion massspectrometry (MC-SIMS), to determine PAG homogeneity on a 10-15 nm scale within a photoresist film. In comparisonto conventional SIMS, of which the detection spatial resolution is limited to large domains and the data is aggregatedprior to analysis, MC-SIMS bombards the sample with a sequence of massive Au_(400)~(+4) nanoprojectiles, each separated intime and space, collecting and mass analyzing the co-emitted secondary ions from each projectile impact. Each sample isanalyzed with a large quantity (10~6-107) of individual projectile impacts within an analysis area 125 μm in diameter.Analysis of co-emission of these independent 10~6-10~7 mass spectra allows for identification of co-localized moleculeswithin nanodomains ~10-15 nm diameter and ~10 nm in depth (the emission area of a single impact) from the filmsurface. This unique method therefore reveals spatial distributions of molecules at the nanoscale.Using MC-SIMS methodology, we directly measured key factors influencing the PAG homogeneity at the nanoscaleincluding (1) PAG concentration, (2) the nature of the polymer matrix, (3) the nature of the PAG, and (4) additives. Wediscovered that 85-95% of PAG salts aggregate at the nanoscale. The majority of the PAG aggregates are less than 10nm in size and are highly homogeneously distributed within the polymer matrix in the film. Furthermore, the size of thePAG aggregates can be manipulated by additives through an ion-exchange mechanism.
机译:随着半导体行业不断追求更小,更先进的设备节点,提高光刻胶的光刻性能变得越来越关键和具有挑战性。薄膜中光刻胶成分的均匀性,例如光致产酸剂(PAG)分子的分布,是影响分辨率和显影后侧壁粗糙度的关键因素。然而,仍然缺乏基本的实验方法来探测整个光刻胶膜中这些组分在纳米级的分布。在本文中,我们提出使用一种新的方法,即大规模簇二次离子质谱法(MC-SIMS),来确定光致抗蚀剂膜中10-15 nm范围内的PAG均匀性。与传统SIMS相比,传统SIMS的检测空间分辨率仅限于大范围,并且在分析之前会汇总数据,因此,MC-SIMS会使用大量Au_(400)〜(+ 4)纳米弹,每个弹在时间和空间上均分开,收集并质量分析每种弹撞击产生的共同发射的二次离子。 \ r \ n在直径为125μm的分析区域内对大量的(10〜6-107)弹丸撞击进行分析。\ r \ n对这些独立的10〜6-10〜7质量的共同发射进行分析光谱可以识别出位于膜表面的直径约10-15 nm,深度约10 nm(单次撞击的发射区域)的纳米域内的共定位分子。因此,这种独特的方法揭示了纳米级分子的空间分布。\ r \ n使用MC-SIMS方法,我们直接测量了影响纳米级PAG均匀性的关键因素,包括(1)PAG浓度,(2) (3)PAG的性质,以及(4)添加剂。我们发现85-95%的PAG盐在纳米级聚集。大多数PAG聚集体的尺寸小于10nm,并且高度均匀地分布在薄膜的聚合物基质中。此外,\ r \ nPAG聚集体的大小可以通过离子交换机制由添加剂控制。

著录项

  • 来源
    《Advances in Patterning Materials and Processes XXXVI》|2019年|109600G.1-109600G.10|共10页
  • 会议地点 0277-786X;1996-756X
  • 作者单位

    DuPont Electronics Imaging, 455 Forest St, Marlboro, MA, USA 01752-4650;

    DuPont Electronics Imaging, 455 Forest St, Marlboro, MA, USA 01752-4650;

    Department of Chemistry, Texas AM University, College Station, 77843;

    Department of Chemistry, Texas AM University, College Station, 77843;

    Department of Chemistry, Texas AM University, College Station, 77843;

    DuPont Electronics Imaging, 455 Forest St, Marlboro, MA, USA 01752-4650;

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  • 正文语种 eng
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  • 入库时间 2022-08-26 14:32:20

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