Optimizing the power confinement in silicon slot waveguides by use of Finite Element Method

摘要

In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.