High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain

摘要

High-performance poly-Ge thin-film transistors (TFTs) were fabricated using NiGe Schottky contacts as source/drain (S/D). First, formation of NiGe layers by annealing of Ni-Ge structures was investigated as a function of annealing temperature, and NiGe-Ge Schottky contacts (φ_(Bn)=0.51 eV) with a low reverse leakage current (～10~(-2)A/cm~2) were realized at 200-300℃. On the basis of the results, NiGe Schottky S/D contacts were fabricated using poly-Ge/quartz substrates. The TFTs showed good operation characteristics with a hole mobility of ～140 cm~2V~1s~1. This is a great advantage for the realization of high-performance TFTs for future system-in-displays.