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Study on magnetoresistance for trilayer with Fe_3O_4 film

机译:Fe_3O_4薄膜三层膜的磁致电阻研究

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摘要

High quality Fe_3O_4 thin film was synthesized by the magnetron sputtering method using Ar-H_2 gas. Giant magneto resistance of the trilayer using Fe_3O_4 was investigated, where the observed MR ratio was less than 1%. A phenomenological calculation was made to make the origin of the small MR ratio clear, using a parallel current model assuming five passes. It is concluded that the non-magnetic layer surrounded by two magnetic layers is necessary to have the same order resistivity and similar thickness with Fe_3O_4 layer in order to obtain the large MR ratio for the trilayer using
机译:利用磁控溅射法,利用Ar-H_2气体合成了高质量的Fe_3O_4薄膜。研究了三层Fe_3O_4的巨磁电阻,观察到的MR比小于1%。使用假设五次通过的并联电流模型,进行了现象学计算,以使小MR比的来源清楚。得出的结论是,由两个磁性层包围的非磁性层必须具有与Fe_3O_4层相同的电阻率和相似的厚度,以便获得使用三层的大MR比。

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