Department of Physics, The University of Hong Kong, Pokfulam, China;
Department of Physics, The University of Hong Kong, Pokfulam, China;
Department of Physics, The University of Hong Kong, Pokfulam, China;
Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400,01328 Dresden, Germany;
Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400,01328 Dresden, Germany;
ZnO; pulsed laser deposition; positron annihilation spectroscopy; Zn-vacancy related defects; monovacancy; divacancy;
机译:通过脉冲激光沉积生长的ZnO薄膜中鉴定的Zn空位相关缺陷
机译:通过脉冲激光沉积在(112)LaAlO _3 /(La,Sr)(Al,Ta)O_3衬底上生长的半极性(112?2?)ZnO中的缺陷
机译:使用Al:ZnO导电层在Si上进行脉冲激光沉积而生长的c轴取向LiNbO3薄膜的结构和界面缺陷
机译:通过脉冲激光沉积增长的ZnO空位相关缺陷
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:在钠钙玻璃基板上通过脉冲激光沉积生长的ZnO膜,用于表皮葡萄球菌生物膜的紫外线灭活
机译:通过脉冲激光沉积生长的ZnO中的Zn空位相关缺陷