Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China;
Pillar of Engineering Product Development, Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682;
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China;
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China;
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China;
Department of Electronic and Computer Engineering, South University of Science and Technology of China, Shenzhen, Guangdong, China;
In-Ga-Zn oxide; thin film transistors; contact resistance;
机译:具有金属透明导电氧化物电极的IGZO薄膜晶体管的比接触电阻和接触/半导体界面的XPS研究
机译:非晶氧化物半导体In-Ga-Zn-O与金属电极之间的比接触电阻
机译:钼源极/漏极接触电阻对非晶氧化锌锌(a-ZTO)薄膜晶体管的影响
机译:金属电极对喷墨印刷IN-Zn氧化物TFT的接触电阻的影响
机译:金属纳米粒子油墨配方开发和电流性喷墨印刷的优化
机译:使用柔性印刷电路板阵列对高分辨率胃电电极贴搏的金VS银电极触点的比较
机译:通道层厚度对喷墨印刷In-Ga-Zn氧化物薄膜晶体管电性能的影响
机译:用于固体氧化物燃料电池的电解质和阳极功能层的喷墨印刷(后印刷)