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Influence of OVPD parameters on the performance of organic solar cells utilizing pentacene/PTCDI absorption layers

机译:OVPD参数对并五苯/ PTCDI吸收层对有机太阳能电池性能的影响

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摘要

As global energy demand is steadily growing, renewable energy generation by solar cells is becoming increasingly important. The use of mono- and polycrystalline silicon solar cells, which nowadays dominate the market, is limited by wafer size, rigidness of substrates and the requirement of large energy amounts for manufacturing. Organic solar cells (OSC) have the potential to overcome these limitations; especially organic vapor phase deposition (OVPD) technology offers the possibility of reproducible, large-scale production at low temperatures and on flexible substrates. We report on planar heterojunction OSC utilizing an active layer of pentacene/N, N'- ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide (PTCDI) fabricated by an Aixtron Gen-1 OVPD tool. The influence of substrate temperature was studied using atomic force microscopy (AFM) on single layers and bilayers. In addition electrical characterization with and without illumination of fully processed solar cells which utilize different cathode layers was carried out. AFM images indicate that crystallization of pentacene layers can be widely influenced by substrate temperature, a PTCDI-C_(13)H_(27) layer atop of these covers the crystallites. Open-circuit voltage was found to be 0.47 V and short-circuit current densities beyond 0.8 mA/cm~2 were measured under a spectrum close to AM 1.5 with 100 mW/cm~2. Fill factors were determined to be as high as 44 %.
机译:随着全球能源需求稳定增长,太阳能电池产生的可再生能源变得越来越重要。如今,在市场上占主导地位的单晶硅和多晶硅太阳能电池的使用受到晶片尺寸,基板刚度以及制造所需大量能量的限制。有机太阳能电池(OSC)有克服这些限制的潜力。尤其是有机气相沉积(OVPD)技术提供了在低温和柔性基板上进行可重复大规模生产的可能性。我们报告了利用Aixtron Gen-1 OVPD工具制造的并五苯/ N,N'-双十三烷基per-3,4,9,10-四羧酸二酰亚胺(PTCDI)的活性层的平面异质结OSC。使用原子力显微镜(AFM)研究了衬底温度对单层和双层的影响。另外,进行了具有和不具有照明的利用不同阴极层的完全加工的太阳能电池的电表征。 AFM图像表明并五苯层的结晶会受到基材温度的广泛影响,这些层顶上的PTCDI-C_(13)H_(27)层覆盖了微晶。发现开路电压为0.47 V,并且在接近于AM 1.5的光谱下以100 mW / cm〜2测得的短路电流密度超过0.8 mA / cm〜2。填充因子被确定为高达44%。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US);Boston MA(US)
  • 作者单位

    Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany, AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany;

    Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

    Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光电子技术、激光技术;光电子技术、激光技术;
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