Two-Dimensional Analytical Modeling of Non-Linear Charge Injection in Bottom-Contact Organic Field-Effect Transistors

摘要

In this paper we present a 2D analytical model for the potential and the electric field in bottom-contact organic field-effect transistors (OFETs) and an approach for calculation of the tunneling and thermionic source and drain injection current. The electrostatics are analytically calculated by solving the Poisson equation via the conformal mapping technique, based on that the currents were computed. Typical OFET behaviors like nonlinear injection and s-like shape are clearly visible. The model is compared with devices simulated by TCAD Sentaurus for various geometrical parameters.