Response and sensitivity of TiO_2-SnO_2 semiconducting sensors for reducing gases

机译：TiO_2-SnO_2半导体传感器的响应与灵敏度。

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摘要

TiO_2-SnO_2 mixed oxide semiconductors are proposed as candidates for hydrogen gas sensors. The sensor responses in terms of the electrical conductance and the sensitivity to hydrogen partial pressure and temperature are analyzed in order to optimize the sensor performance.

机译：提出了TiO_2-SnO_2混合氧化物半导体作为氢气传感器的候选材料。为了优化传感器性能，分析了传感器在电导率以及对氢分压和温度的敏感性方面的响应。

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来源
《Optoelectronic and Electronic Sensors VI; Proceedings of SPIE-The International Society for Optical Engineering; vol.6348》|2006年|63480G.1-63480G.4|共4页
会议地点 Zakopane(PL)
作者
Katarzyna Zakrzewska; Marta Radecka; Michal Szyper;
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作者单位

AGH-University of Science and Technology, 30-059 Krakow, al. Mickiewicza 30, Poland;

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会议组织
原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
gas sensor; titanium dioxide; tin dioxide;

机译：气体传感器二氧化钛;二氧化锡;

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Response and sensitivity of TiO_2-SnO_2 semiconducting sensors for reducing gases

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