Antireflection coating for photo-pumped Ⅳ-Ⅵ semiconductor Light Emitting Devices

摘要

An antireflection coating material for optically pumped group Ⅳ-Ⅵ lead-chalcogenide semiconductor light emitting devices has been proposed. The coating has been used to increase the photo-pumping efficiency. Theoretical model showed that with the proposed AR coating with a quarter wavelength thickness, 0.008% reflectivity could be achieved in the 980nm-982nm wavelength region. The antireflection property of the coated film was investigated by FTIR-spectroscopic reflectance measurement. Room temperature continuous-wave photoluminescence measurement from AR-coated multiple quantum well structures showed up to 4-times increment in the PL intensity, compared to uncoated ones.