Design, fabrication and characterization of high-performance solar-blind AlGaN photodetectors

摘要

Design, fabrication, and characterization of high-performance Al_xGa_(1-x)N-based photodetectors for solar-blind applications are reported. Al_xGa_(1-x)N heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.