Abstract: Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films on glass substrates have been prepared by pyrolysis method, and the coercive force (H$-c$/) and the compensation temperature (T$- comp$/) were investigated. For Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films, high H$-c$/ values of 13 kOe and 7 kOe were obtained, respectively. The extremely high H$-c$/ values were attributed to Cu entering the lattice sites. !11
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