Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China;
机译:具有扩展焦深和/或焦平面偏移的相移掩模的系统设计
机译:使用感应耦合等离子体(ICP)的极紫外蚀刻(EUVL)的交替相移掩模(PSM)结构的高度选择性干法蚀刻
机译:相移掩模可补偿高数值孔径极紫外光刻中的掩模3D效果
机译:焦点换档受掩模3D影响并在ATT之间的比较。 PSM和OMOG.
机译:EUV掩模技术的主要挑战:光化掩模检测和掩模3D效果。
机译:通过佩戴商业全面掩模与临时3D印刷过滤器连接的商业全面面罩作为个人防护设备替代在Covid-19大流行期间的替代方案手术表现不会产生负面影响:随机控制的交叉试验
机译:通过佩戴商业全面掩模与临时3D印刷过滤器连接的商业全面面罩作为个人防护设备替代在Covid-19大流行期间的替代方案,手术表现不会产生负面影响:随机控制的交叉试验