首页> 外文会议>Optical Microlithography XVIII pt.1 >A High-Frame-Rate DUV-Optimized CCD for Simultaneous Measurements of Illumination Intensity, Polarization Amplitude, and Polarization Direction for Very-High NA Imaging Systems
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A High-Frame-Rate DUV-Optimized CCD for Simultaneous Measurements of Illumination Intensity, Polarization Amplitude, and Polarization Direction for Very-High NA Imaging Systems

机译:高帧率DUV优化CCD,用于同时测量非常高NA成像系统的照明强度,偏振幅度和偏振方向

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Lincoln Laboratory has designed and fabricated a charge-coupled device (CCD) array capable of imaging both polarization and illumination uniformity. The device consists of an 1107-element linear array of UV-optimized silicon photodiodes read out by a three-stage CCD through a single ~1-MHz output amplifier. This yields an effective clock rate for the whole array of ~1 kHz. Each of the active diode surfaces within the 1107-element array is covered by a UV-opaque layer of polysilicon into which are patterned 140-nm, transmissive sampling slits. The orientation and location of the slits allows simultaneous determination of illumination uniformity, degree and direction of polarization, and polarization uniformity. The device was tested with a 193-nm excimer laser equipped with variably polarized illumination and the theoretical performance of the device was supported by finite-difference time domain optical simulations.
机译:林肯实验室已经设计并制造了一种能够同时成像偏振和照明均匀性的电荷耦合器件(CCD)阵列。该器件包括一个由紫外线优化的硅光电二极管组成的1107元素线性阵列,该阵列由一个三级CCD通过一个〜1 MHz的输出放大器读出。对于整个〜1 kHz的阵列,这将产生有效的时钟速率。 1107个元素阵列中的每个有源二极管表面都被一个不透明的多晶硅层覆盖,在该层中形成了140 nm的透射采样缝隙。狭缝的取向和位置允许同时确定照明均匀性,偏振的程度和方向以及偏振均匀性。用装有可变偏振照明的193 nm准分子激光器测试了该器件,并且该器件的理论性能得到了时域有限差分光学仿真的支持。

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