Measurement of Photoelectron Behavior in K_4Ru(CN)_6 Doped AgCl Emulsion

摘要

Photoelectron decay characteristics in latent image formation process directly reflect photographic efficiency of silver halide crystals. Dopants can be substitutionally incorporated into AgX crystals and influence the photoelectron action by introducing appropriate electron traps. Long photoelectron lifetime can improve the photographic efficiency of intrinsic or unsensitized grains. In general, AgCl are intrinsic or unsensitized emulsion. Cubic AgCl microcrystals doped with K_4Ru(CN)_6 were measured by microwave absorption and dielectric-spectrum technique. Measurement of the photoelectron decay process as a function of doping position and concentration can provide important information about the electronic properties. The experimental results show the photoelectron decay time at room temperature is more or less longer than undoped samples. The photoelectron decay time increases with the doping concentration increasing and with the doping position closer to the core except for position 30%Ag and over high concentration 3.21 X 10~(-5) mol/molAg. When doping position is 30%Ag, the photoelectron decay time reaches its maximum at the doping concentration of 1.5 X10~(-5) mol/molAg. At doping concentration 3.21 X10~(-5) mol/molAg, the photoelectron decay time reaches its maximum at the doping position 60%Ag. Through studying the photoelectron decay behavior, we can know the doping can improve the image quality of AgCl emulsion.